The results show smaller grains after the 1 st ARB pass, with substantial grew after the 2 nd ARB pass due to the higher temperature owing adiabatic warming. Two ARB cycles were performed in this study, at room temperature, and the samples were characterised by EBSD. This paper presents an Electron Backscatter Diffraction (EBSD) analysis of the effect of temperature on grain size, grain boundaries and texture of Aluminium Alloy 1050-H4 during Accumulative Roll Bonding (ARB). In summary, an outlook for EBSD technique was provided. Sample preparation methods were reviewed and EBSD ap-plication in conjunction with other characterization techniques on a variety of materials has been presented for several case studies. Image quality, resolution and speed, and system calibration have also been discussed. Principles of crystal diffraction with description of crystallographic orientation, orientation determination and phase identification have been described. Key milestones re-lated to technological developments of EBSD technique have been outlined along with possible applications using modern EBSD system. Captured patterns can then be used to determine grain morphology, crystallographic orientation and chemistry of present phases, which provide complete characterization of microstructure and strong correlation to both properties and performance of materials. 230000003287 optical Effects 0.Electron Back-Scatter Diffraction (EBSD) is a powerful technique that captures electron diffraction patterns from crystals, constituents of material.238000007796 conventional method Methods 0.000 description 1.238000004458 analytical method Methods 0.000 description 1.238000001350 scanning transmission electron microscopy Methods 0.000 description 2.239000011159 matrix material Substances 0.000 description 2.238000001878 scanning electron micrograph Methods 0.000 description 4.238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 7.238000010894 electron beam technology Methods 0.000 description 9.230000000875 corresponding Effects 0.000 claims description 18.238000003384 imaging method Methods 0.000 claims description 33.239000002245 particle Substances 0.000 claims abstract description 134.238000001887 electron backscatter diffraction Methods 0.000 title abstract description 64.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority to US16/460,749 priority Critical patent/US11114275B2/en Application filed by FEI Co filed Critical FEI Co Publication of EP3761016A2 publication Critical patent/EP3761016A2/en Publication of EP3761016A3 publication Critical patent/EP3761016A3/en Application granted granted Critical Publication of EP3761016B1 publication Critical patent/EP3761016B1/en Status Active legal-status Critical Current Anticipated expiration legal-status Critical Links Original Assignee FEI Co Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) ![]() Stephens Current Assignee (The listed assignees may be inaccurate. ( en Inventor Pavel Stejskal Christopher J. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Granted Application number EP20183254.0A Other languages German ( de) Google Patents Methods and systems for acquiring electron backscatter diffraction patternsÄownload PDF Info Publication number EP3761016A2 EP3761016A2 EP20183254.0A EP20183254A EP3761016A2 EP 3761016 A2 EP3761016 A2 EP 3761016A2 EP 20183254 A EP20183254 A EP 20183254A EP 3761016 A2 EP3761016 A2 EP 3761016A2 Authority EP European Patent Office Prior art keywords roi signal quality scan impact point sample Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents EP3761016A2 - Methods and systems for acquiring electron backscatter diffraction patterns EP3761016A2 - Methods and systems for acquiring electron backscatter diffraction patterns
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